High-k dielectric marketsize is anticipated to witness substantial growth from 2016 to 2023. Increasing need for low thermal stable materials accompanied by rigorous research and development in the field is expected to drive the industry growth. It is a type of material that possesses high dielectric constant κ and is primarily employed in semiconductor manufacturing processes.
High dielectric constant (k > 10) insulators are essential for 70 nm technology node and beyond. Most of the dielectric materials have poor characteristics than the other conventional silicon oxide which are being deployed as gate dielectric material. High k TM oxides consists poor interface quality as well as thermal stability with the silicon substrate. TM silicates such as HfSiOx are expected to witness significant gains owing to better thermal stability. The above mentioned factors are responsible to drive high-k dielectric market size.
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Dielectric constant silicates possess less thermal stability when compared to TM oxides and are relatively higher than silicon oxide. The fundamental physics for the objectionable properties is administered mainly by ionic nature of TM oxygen bonds. These bonds are formed through transfer of the d-state as well as s-state valence electrons of the metal into the oxygen 3p or 3s empty orbitals. Metal-oxygen bonds are more or less ionic in nature. As metal oxidation takes place easily, the oxide film is likely to have a huge amount of oxygen vacancies and it would be easier to partly crystallize it.
This mechanism offers high trap density in metal oxides as TM elements reacts with the Si substrate atoms at low energy. These interfacial silicate bonds functioning as interface trap also aids in lowering the conduction band offset energy. The polarized metal-oxygen or ionic bonds are also the reason for existence of high-k values as well as the existence of soft optical phonons. Hafnium compounds are likely to drive high-k dielectric market growth owing to its wide scale implementation as semiconductors. Proliferating demand for these products is likely to observe massive growth opportunities to large number of industry partners. Rising demand for these products from transistor industry sector is anticipated to fuel the industry growth.
Charge trapping characteristics is anticipated to determine the application of metal oxides in CMOS devices. It might hamper the threshold voltage offered by the transistors and is likely to have an effect on the defect nature of dielectrics. Inefficient electrical properties offered by SiON and SiO2 are also anticipated to hinder the industry growth. Furthermore, the interface traps existing between the interfacial layer and high-k layer as well as the gap present between interfacial layer and substrate is substantially high.
Based on technology, the industry can be segregated as capacitor; high-k gates as well as interconnects. These precursors are majorly used for capacitors as well as gates whereas, metal precursors are majorly used in interconnect layer and electrode. The technology is mainly deployed in transistor scaling. Amalgamation of metal gate technology with high-k dielectric is expected to provide high resistance for gate leakages.
Asia Pacific high-k dielectric market size is expected to continue its dominance in metal precursors. Continuing transfer of global electronic equipment productions from China and above average semiconductor content of the equipment are the factors projected to propel the industry dynamics over the several upcoming years.
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Escalating demand for semiconductors from BRIC (Brazil Russia India China) economies is anticipated to drive the industry growth. Increasing demand for end-use electronic products accompanied by portability, low cost along with diversity offered by high-k dielectrics might drastically boost up the high-k metal precursors market growth over the several upcoming years.
Key trend supporting the U.S microelectronics and nanotechnology industry is the mounting complexity of semiconductors production with transition as well as scaling up to 450mm wafers processing. The industry is expected to implement comprehensive architectures based on new process and materials demanding complex co-development, co-design and joint development agreements and 3D stacked ICs.
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