Global GaN Semiconductor Devices Market – Synopsis & Scenario
Product innovation is the master trend of all times. Market players keep introducing innovated products with increased efficiency such as
– On 25th January 2016, Fujitsu Ltd. announced about its new GaN high electron mobility transistor. This is developed to be used at high capacity wireless network with coverage over wide range of network.
– Cree Inc. has signed an agreement with Avnet Inc. in July 2016 that expands the distribution of Cree’s LED components which also includes high power chips and LED modules in the American region.
Global GaN Semiconductor Devices Market – Segments
For an easy grasp, the Global GaN Semiconductor Devices Market is segmented in to 3 major dynamics
Segmentation by Type: opto semiconductor and power semiconductor.
Segmentation by Devices: transistors, diodes, rectifier, power ICs, amplifier and switching system.
Segmentation by Applications: consumer electronics, automotive, medical, power conditioner, and military, aerospace & defense among others.
- RF Micro Devices Incorporated (U.S.)
- Fujitsu Ltd.(Japan), Toshiba Corp. (Japan)
- Texas Instruments Inc. (U.S.)
- Cree Incorporated (U.S.)
- Aixtron SE (Germany)
- Mitsubishi Chemical Corporation (Japan)
- Koninklijke Philips N.V. (Netherlands)
- GaN Systems Inc. (Canada)
- Epigan NV (Belgium)
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Global GaN Semiconductor Devices Market – Overview
The Global GaN Semiconductor Devices Market is expected to witness a steady growth with a significant rate of CAGR during the forecasted period (2016 – 2022)
The major growth driver of GaN Semiconductor Devices Market includes growing demand of radio-frequency in semiconductor market, growing market of electric vehicles and photovoltaic inverters, and growing market of consumer electronics especially of LED based lighting and displays among others.
However, high initial cost is one of the factors which are hindering the growth of GaN Semiconductor Devices Market, states the MRFR Research Analyst while commenting upon the deep diving study report published by Market Research Future, presented through more than 100 market data tables and figures spread over 110 pages.
GaN Semiconductor Devices Market – Regional
North-America dominated the Global GaN Semiconductor Devices Market with the largest market share owing to high penetration of GaN semiconductor in aerospace & defence sectors as well as in automotive sectors in the region, and therefore accounting for millions of USD and is expected to grow even further by 2022. GaN Semiconductor Devices Market in Asia-Pacific market is expected to grow at a significant rate of CAGR with an increased revenue generation by 2022. The European market for GaN Semiconductor Devices Market is expected to grow at a considerable rate of CAGR (2016-2022).
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Table Of Content
1. Report Prologue
2.2 Scope of the Study
2.2.1 Research Objective
2.3 Market Structure
2.4. Market Segmentation
3. Research Methodology
3.1 Research Process
3.2 Primary Research
3.3 Secondary Research
3.4 Market Size Estimation
3.5 Forecast Model
4. Market Dynamics
4.4 Mega Trends
4.5 Macroeconomic Indicators
5. Market Factor Analysis
5.1 Value Chain Analysis
5.2 Porters Five Forces
The study was conducted using an objective combination of primary and secondary information including inputs from key participants in the industry. The report contains a comprehensive market and vendor landscape in addition to a SWOT analysis of the key vendors.
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