Rapid development in electronics and semiconductor sectors has increased the need for transistors and integrated circuits (IC) in GaN semiconductor devices. Additionally, the GaN possess the characteristics such as low resistance which reduces the conductance dissipation, minimizes the switching losses, low power to drive the circuits and reduced size at printed circuit boards (PCB) which adds to the market of GaN semiconductor devices. Additionally, GaN provides greater stability in radioactive environment and exhibits a unique ability to control and produce electrons more than 1000 times of silicon (Si) is expected to be major advantages for the GaN Semiconductor Devices Market to grow over the forecast period.
Moreover, the GaN semiconductor device are bifurcated into type, wafer size, devices, and end user. By type, gallium nitride semiconductor devices is divided into opto semiconductor, power semiconductor, and RF semiconductors. Based on wafer size the gallium nitride semiconductor is further sub categorized into 2 inches, 4 inches, and 6 inches and above. Furthermore, device based gallium nitride semiconductor is subdivided into transistor, diode, rectifier, power ICs, power drivers, supply & inverter, amplifiers, lighting & laser, and switching systems. Lastly, the gallium nitride semiconductor devices are sub segmented into end user which include automotive, aerospace & defense, consumer electronics, telecommunication, and medical
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The gallium nitride (GaN) semiconductor devices is segmented into type, wafer size, devices and end user.
Based on the type gallium nitride semiconductor devices is sub-segmented into Opto semiconductor, power semiconductor and RF semiconductors. By wafer size the gallium nitride semiconductor is further sub divided into 2 inches, 4 inches and 6 inches and above.
Furthermore, device based gallium nitride semiconductor is sub-segmented into transistor, diode, rectifier, power ICs, power drivers, supply& inverter, amplifiers, lighting & laser, and switching systems. Lastly, the gallium nitride semiconductor devices are sub-segmented into end user which include automotive, aerospace & defense, consumer electronics, telecommunication, and medical.
The prominent players in GaN Semiconductor Devices Market are – Cognitive Operational Systems, Inc. (U.S.), Haapie SAS (France), KinderLab Robotics (U.S.), Tinybots (Netherlands), BKIN Technologies Limited (Canada), R.U. Robots Limited (U.K.), Behaviour Labs SRL (Italy), Heron Robots SRL (Italy), Perceptronic Solutions, Inc. (U.S.), Cognitive Spring (U.S.) among others.
Geographically, the gallium nitride (GaN) semiconductor devices are segmented into five different regions namely North America, Asia Pacific, Europe, the Middle East & Africa, and Latin America.
North America is presumed to be a prominent region in gallium nitride semiconductor devices market. The U.S. is a leading market owing to the rapid development in the aerospace and rising demand for semiconductor devices in military, offshore oil & gas exploration, and emergency medical service providers over the forecast period. Asia Pacific region is expected to have substantial growth in the gallium nitride semiconductor devices market. China, Taiwan, Republic of Korea, and Japan are the market leaders in the gallium nitride semiconductor devices. Europe is also anticipated to have a significant growth rate over the forecast period.
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- End users of the gallium nitride semiconductor device
- Wafer equipment manufacturers
- Integrated devices manufacturers (IDMs)
- Distributors and traders
- Technology providers
- Research organizations and consulting companies
- Government agencies
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