GaN Semiconductor Device Global Market – Overview
Gallium Nitride (GaN) is an emerging substitute for pure silicon in semiconductors. Used widely in LED diodes, GaN is a resilient compound that possesses a Wurzite crystalline structure composition. Being a highly power efficient compound, GaN is capable of working with high frequencies and also has the capability to radiate high brightness when used in an opto-semiconductor.
Gallium nitride semiconductors are increasingly being preferred over silicon technology because GaN semiconductors are better able to handle high intensity power and temperature. Other unique features include high speed switching capacity, low resistance, high dielectric strength and high current density. Such unique features and the high efficiency make GaN an apt semiconductors technology for transistors, diodes, power amplifiers, supply and inverter, amplifiers, lighting and laser and switching systems.
Market Research Future’s (MRFR) market report on GaN semiconductor devices takes a closer look at the market to uncover trends and project a CAGR for the forecast period. The report identifies key drivers for the market and provides a deeper understanding of what trends can be expected in the semiconductor industry during the forecast period.
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GaN semiconductor devices are commonly used in sectors such as automotive, telecommunications, consumer electronics and medical. Additionally, MRFR’s study has identified several sectors where there is an upsurge in demand for semiconductors, including military applications, space applications and power electronics. This increase in demand can be attributed to a greater stability in radioactive surroundings, an impressive ability to control electrons and low manufacturing costs.
Key market drivers include swift evolution of automated devices and a growing demand for wireless devices. Silicon carbide (SiC) semiconductor devices are projected to be a strong competition for the GaN semiconductor devices, which is likely to restrict the market growth to some extent during the assessment period. At the same time, environmental issues associated with manufacturing of GaN semiconductor devices remains a major concern for market players. Despite these challenges, the GaN semiconductors market is expected to achieve a CAGR of 8% and reach a valuation of USD 27 billion during the forecast period of 2017 – 2023.
The prominent players in GaN Semiconductor Devices Market are – Cognitive Operational Systems, Inc. (U.S.), Haapie SAS (France), KinderLab Robotics (U.S.), Tinybots (Netherlands), BKIN Technologies Limited (Canada), R.U. Robots Limited (U.K.), Behaviour Labs SRL (Italy), Heron Robots SRL (Italy), Perceptronic Solutions, Inc. (U.S.), Cognitive Spring (U.S.) among others.
The gallium nitride (GaN) semiconductor devices is segmented into type, wafer size, devices and end user.
Based on the type gallium nitride semiconductor devices is sub-segmented into Opto semiconductor, power semiconductor and RF semiconductors. By wafer size the gallium nitride semiconductor is further sub divided into 2 inches, 4 inches and 6 inches and above.
Furthermore, device based gallium nitride semiconductor is sub-segmented into transistor, diode, rectifier, power ICs, power drivers, supply& inverter, amplifiers, lighting & laser, and switching systems. Lastly, the gallium nitride semiconductor devices are sub-segmented into end user which include automotive, aerospace & defense, consumer electronics, telecommunication, and medical.
Geographically, the gallium nitride (GaN) semiconductor devices are segmented into five different regions namely North America, Asia Pacific, Europe, the Middle East & Africa, and Latin America.
North America is presumed to be a prominent region in gallium nitride semiconductor devices market. The U.S. is a leading market owing to the rapid development in the aerospace and rising demand for semiconductor devices in military, offshore oil & gas exploration, and emergency medical service providers over the forecast period. Asia Pacific region is expected to have substantial growth in the gallium nitride semiconductor devices market. China, Taiwan, Republic of Korea, and Japan are the market leaders in the gallium nitride semiconductor devices. Europe is also anticipated to have a significant growth rate over the forecast period.
Latest Industry News
Cree has announced that it has signed a non-exclusive, global, royalty bearing patent license agreement with Dutch company, Nexperia BV. The agreement gives Nexperia access to Cree’s expansive GaN power device patent portfolio. Years of innovation and development efforts is now allowing Cree to help facilitate further market growth.
The Japan Aerospace Exploration Agency (JAXA) is evaluating and validating Panasonic’s X-GaN power transistors for possible use in its ongoing development of relevant space technologies. Potential for approval of use for aforementioned activities appears to be high. Space radiation is one of the main reasons that these devices are being considered- GaN semiconductor devices display the ability to successfully withstand radiation.
- End users of the gallium nitride semiconductor device
- Wafer equipment manufacturers
- Integrated devices manufacturers (IDMs)
- Distributors and traders
- Technology providers
- Research organizations and consulting companies
- Government agencies
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TABLE OF CONTENTS
1 Executive Summary
2 Scope Of The Report
2.1 Market Definition
2.2 Scope Of The Study
2.2.1 Research Objectives
2.2.2 Assumptions & Limitations
2.3 Markets Structure
3 Market Research Methodology
3.1 Research Process
3.2 Secondary Research
3.3 Primary Research
3.4 Forecast Model
4 Market Landscape
4.1 Porter’s Five Forces Analysis
4.1.1 Threat Of New Entrants
4.1.2 Bargaining Power Of Buyers
4.1.3 Threat Of Substitutes
4.1.4 Segment Rivalry
4.2 Value Chain/Supply Chain Of Global Gallium Nitride (GaN) Semiconductor Devices Market
5 Industry Overview Of Global Gallium Nitride (GaN) Semiconductor Devices Market
5.2 Growth Drivers
5.3 Impact Analysis
5.4 Market Challenges
6 Market Trends
6.2 Growth Trends
6.3 Impact Analysis
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